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Archana Godaba
electronics and communication engineering student
聽路聽Visakhapatnam,聽India
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I have started a project on the design of logic gates using finFET technology. I have a basic idea of simulating it using TCAD software. Please help me out by giving suggestions on how to proceed and also extend the project, thank you 馃槂.

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Kabadi Ramachandra
ceo, project coordination, business development
聽路聽Bengaluru,聽India
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Masud Kaiser Mitul
Engineer
聽路聽Khulna,聽Bangladesh
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Though I dont know the specifics of your project, I can suggest something very basic. First u can simulate all the basic logic gates by using FinFET. Then u can simulate some basic digital logic circuits like adder, subtractor, flip-flop, up counter, down counter using FinFET based logic gates. Then u can do the same things using conventional MOSFET and compare performance to demonstrate wheather FinFET is better or not. But if ur project is somewhat more specific then please mention it, may be it will pave us the way to be more collaborative in solving some particular and relevant issue.

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Pruthvi Av
聽路聽Visakhapatnam,聽India
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hi i could understand that you would like to do something new and invent something that is efficient with the finFET鈥檚 .The first step in this project should be to select a sector in which these finFET鈥檚 could be a replacement and the various applications in which these can be used to create something new.And you could try them in sectors like
FinFET integrated low-power circuits for enhanced sensing applications
FinFET for high sensitivity ion and biological sensing applications
These are just a couple of examples.
If we can do some more research and choose the perfect application things can be wonderful.
Any other suggestions am ready for work
Thank you.

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Zubairu Abana Mala
NYSC MEMBER
聽路聽Shiroro,聽Nigeria
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Hi, i am little busy. well for the project of yours, i have no experience on it such cause i never try it but i may advise us to go through its data sheet and see if it can be manipulated and also check its compatibility as related to your project.

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Mohsin Raza
Engineering Projects
聽路聽Multan,聽Pakistan
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It is highly likely that multigate device adoption will occur in a high-performance process technology, owing to the increased performance and area benefits. In this paper, for the first time, we evaluate symmetric (Symm-桅G) and asymmetric (Asymm-桅G) gate-workfunction FinFETs head to head in a high-performance process, using technology computer-aided design 3-D device simulations. We demonstrate that Asymm-桅G shorted-gate (a-SG) n/p-FinFETs, which use both workfunctions corresponding to typical high-performance metal-gate n/p-FinFETs, are promising, as they can yield over two orders of magnitude lower leakage without excessive degradation in ON-state current, in comparison to Symm- 桅G shorted-gate (SG) FinFETs, placing them in a better position than back-gate biased independent-gate (IG) FinFETs for leakage reduction.

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Archana Godaba
electronics and communication engineering student
聽路聽Visakhapatnam,聽India
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Thanks for the replies.
I have tried simulating FINFET inverter using LTspice XVII simulation tool by downloading 鈥榮ubckt鈥 files for DGNMOS and DGPMOS but it is not running as it could not open the supporting 鈥soinmos.pm鈥 file.

also I鈥檝e tried with 20nm Finfet file but couldn鈥檛 simulate as it could not open a supporting .pm again

Please help me out. Also suggest me other Softwares to do the same in case if it鈥檚 not possible to simulate using LTspice XVII

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